Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves

摘要

Nanoscale multifunctional perpendicular organic spin valves have beenfabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Cotrilayer show resistive switching of up to 4-5 orders of magnitude andmagnetoresistance as high as -70% the latter even changing sign when voltagepulses are applied. This combination of phenomena is typically observed inmultiferroic tunnel junctions where it is attributed to magnetoelectriccoupling between a ferromagnet and a ferroelectric material. Modeling indicatesthat here the switching originates from a modification of theLa$_{0.7}$Sr$_{0.3}$MnO$_3$ surface. This modification influences the tunnelingof charge carriers and thus both the electrical resistance and the tunnelingmagnetoresistance which occurs at pinholes in the organic layer.